2sc3803 2004-07-07 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc3803 high frequency amplifier applications video amplifier applications high speed switching applications ? high transition frequency: f t = 200 mhz (typ.) ? low collector output capacitance: c ob = 3.5 pf (typ.) ? complementary to 2sa1483 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v continuous collector current i c 200 ma continuous base current i b 50 ma p c 500 collector power dissipation p c (note 1) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on a ceramic substrate (250 mm 2 0.8 t) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2sc3803 2004-07-07 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 45 v, i e = 0 D D 0.1 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 0.1 a h fe (1) (note 2) v ce = 1 v, i c = 10 ma 40 D 240 dc current gain h fe (2) v ce = 3 v, i c = 200 ma 20 D D collector-emitter saturation voltage v ce (sat) i c = 100 ma, i b = 10 ma D D 0.3 v base-emitter saturation voltage v be (sat) i c = 100 ma, i b = 10 ma D D 1.0 v transition frequency f t v ce = 10 v, i c = 10 ma 100 200 D mhz input impedance (real part) re (h ie ) v ce = 10 v, i e = ? 10 ma, f = 200 mhz D D 120 ? collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 3.5 5.0 pf turn-on time t on D 40 D storage time t stg D 250 D switching time fall time t f D 30 D ns note 2: h fe (1) classification r: 40 to 80, o: 70 to 140, y: 120 to 240 marking v part no. (or abbreviation code) lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator 50 ? 200 ? output 500 ? 680 ? v cc = 12 v v bb = ? 3 v 0 10 v 1 s duty cycle 2% input
2sc3803 2004-07-07 3 collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) ambient temperature ta (c) p c ? ta collector power dissipation p c (w) 0 120 80 100 40 60 0 0.6 0.2 1.0 0.4 1.2 20 160 140 0.8 (1) (2) (1) mounted on a ceramic substrate (250 mm 2 0.8 t) (2) no heat sink collector current i c (ma) v be (sat) ? i c base-emitter saturation voltage v be (sat) (v) collector current i c (ma) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) h fe ? i c dc current gain h fe common emitter ta = ? 55c i b = 0.4 ma 0.8 0 1.2 1.6 2.0 2.5 3.0 0 40 80 120 160 200 0 1 2 3 4 5 0.1 1 1 100 30 0.3 0.3 0.5 common emitter i c /i b = 10 0.1 3 10 3 5 ta = ? 55c 25 100 300 common emitter ta = 25c 0 0 1 40 2 3 4 5 80 120 160 200 i b = 0.2 ma 1.0 1.5 0.8 2.5 0 2.0 1.2 0.6 0.4 300 1000 500 common emitter v ce = 3 v 10 100 30 50 ta = 100c 25 ? 55 0.1 1 100 30 0.3 3 10 300 0 40 80 120 160 200 common emitter ta = 100c i b = 0.1 ma 0.2 0 0 1 2 3 4 5 0.3 0.4 0.5 0.7 1.0 1.5 3.0 common emitter i c /i b = 10 ta = 100c 25 ? 55 0.1 0.1 1 100 30 0.3 0.03 0.05 0.01 3 10 0.3 0.5 300
2sc3803 2004-07-07 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to im prove the quality and reliab ility of its products. neve rtheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunctio n or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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